excelics eia1314a - 4p not recommended for new designs. contact factory. effective 03/2003 13.0 - 14.5ghz, 4w internally matched power fet 13.0 - 14.5ghz bandwidth and input/output impedance matched to 50 ohm features high pae (27% typical) +36.0dbm ty pical p 1db output power 8.5db typical g 1db power gain non - hermetic metal flange package electrical characteristics (t a = 25 o c) eia1314a - 4p symbols parameters/test conditions min typ max unit p 1db output power at 1db compression f=13.0 - 14.5ghz vds=8v, idsq=0.5 idss 35.0 36.0 dbm g 1db gain at 1db compression f=13.0 - 14.5ghz vds=8v, idsq=0.5 idss 7.5 8.5 db pae power added efficiency at 1db compression f=13.0 - 14.5ghz vds=8v, idsq=0.5 idss 27 % id 1db drain current at 1db compression 1760 ma ip 3 output 3 rd order intercept point f=13.0 - 14.5ghz vds=8v, idsq=0.5 idss 43 dbm i dss saturated drain current vds=3v, vgs=0v 2200 2880 3400 ma g m transconductance vds=3v, vgs=0v 3000 ms v p pinch - off voltage vds=3v, ids=24ma - 1.0 - 2.5 v bv gd drain breakdown voltage igd=9.6ma - 13 - 15 v r th thermal resistance (au - sn eutectic attach) 4.5 o c/w maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain - source voltage 12v 8v vgs gate - source voltage - 8v - 3v ids drain current idss 3120ma igsf forward gate current 360ma 60ma pin input power 35dbm @ 3db compression tch channel temp erature 175 o c 150 o c tstg storage temperature - 65/175 o c - 65/150 o c pt total power dissipation 30w 25w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals. excelics semiconductor, inc., 310 de guine drive, sunnyvale, ca 94085 phone: (408) 737 - 1711 fax: (408) 737 - 1868 web site: www.excelics.com
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